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晶元等离子体处理系统GX-H80

晶元等离子体处理系统GX-H80

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The composition of the wafer plasma processing system GX-H80 device: The plasma surface treatment device is composed of a reaction chamber (also called a vacuum chamber), a vacuum system, a plasma generation system, an electric control system, and an intake air flow control system. Considering the simplicity and efficiency of the production operation, the margin savings of the processed material and the cost-effectiveness of the processing device, the device is planned to adopt a horizontal placement structure. The reaction chamber is composed of a vacuum chamber and a plate electrode. It is an effective space for plasma (Plasma) processing reaction. The items to be processed are placed horizontally in the reaction chamber and can be designed as a multi-layer structure to facilitate mass operations; the vacuum system consists of vacuum valves, The vacuum pump, vacuum piping, vacuum system control actuators, etc. are responsible for pumping the air in the reaction chamber to a pre-set value and maintaining the corresponding vacuum degree during work; considering that the processed materials of this device require cleaning and activation, Therefore, the plasma generating source of this device is planned to adopt a plasma generating source with a specially processed waveform and a high-speed oscillation function. The system source provides plasma energy to the reaction chamber to excite the reacted gas in the reaction chamber to oscillate and ionize rapidly. Form the required plasma (Plasma) with cleaning ability; the function of the electronic control system is to intelligently and optimally automatically control the entire process of the device's process flow according to the preset process parameters and steps, and can self-tune and maintain the process parameters The stability of the process reaction gas inlet flow control system is mainly composed of a mass flow meter and a self-control electromagnetic valve. Its function is to accurately control the inlet flow rate of the reaction gas and maintain the required vacuum value during work. Epistar plasma processing system GX-H80 adopts PLC programmable control, human-machine dialogue adopts touch screen setting and display, friendly interface, processing parameters can be arbitrarily set on the touch screen, with manual/automatic switching function. The automatic operation adopts "one-button", and the working process is completely controlled by the computer. The manual operation is completed by the user on the manual mode interface.

晶元等离子体处理系统GX-H80


Main technical parameters of Epistar Plasma Treatment System GX-H80:

Overall dimensions

660mm×950mm×1700mm(W×D×H)

Vacuum chamber size

450mm×450mm×400mm(W×D×H)

Vacuum chamber volume

80L

Level electrode size

內置平板式电极,420×310mm(W×D)

Number of layers that can be loaded

6层

Plasma generation system

射頻等离子源(13.56MHZ) 功率,0-500W

Control System

触摸屏+PLC全自动控制

Intake system

2路进气、1路放空                            

All equipment can be customized non-standard, other parameters, related to the company's internal secrets, please call for consultation.

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Yangzhou Guoxing Technology Co., Ltd
Tel:+86 181 3605 7999
Add:No. 6 Factory Building, No. 63 Chenxiang Group, 309 County Road, Daqiao Town, Jiangdu District, Yangzhou City (Yangzhou Factory)
No. 8-4, Pingxiang Road, Kunshan City, Jiangsu Province (Kunshan Office)

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